期刊
JOURNAL OF MATERIALS RESEARCH
卷 29, 期 3, 页码 417-425出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/jmr.2013.293
关键词
vertical graphene; Raman spectroscopy; defects; plasma-enhanced CVD (PECVD)
资金
- Jenkins/NASA Fellowship
- NASA [NNX09AQ44A]
- NASA [NNX09AQ44A, 103935] Funding Source: Federal RePORTER
Vertically aligned graphene was grown by plasma-enhanced chemical vapor deposition using methane feedstock. Optical emission spectroscopy (OES) was used to monitor the plasma species, and Raman spectroscopy was used for characterizing the properties of as-grown vertically aligned graphene. OES-derived information on plasma species, such as C, C-2, CH, and H, are correlated with the properties of the vertically aligned graphene. Graphene grown at 250 W and 15 sccm exhibited the lowest amount of defects. Although OES peak intensities occurred at the highest power and lowest flow conditions, the OES peak ratios of plasma species had a greater dependence on flow rate and exhibited a saddle point in the atomic C/H ratio corresponding to optimal growth involving the lowest amount of overall defects. Plasma diagnostics provides a valuable approach to optimize growth characteristics and material properties.
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