期刊
JOURNAL OF MATERIALS RESEARCH
卷 26, 期 21, 页码 2744-2748出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/jmr.2011.313
关键词
-
资金
- Defense Advanced Research Project Agency [N66001-08-1-2037]
- Korean Research Foundation
- Korean Government [KRF-2007-357-D00022]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907483] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1120577] Funding Source: National Science Foundation
The direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing and growth procedure. With all other conditions remaining identical, annealing below the Au-Si eutectic results in successful heteroepitaxial nucleation and growth of Ge nanowires on Si substrate while annealing above the Au-Si eutectic leads to randomly oriented growth. A model is presented to elucidate the effect of the annealing temperature, in which we hypothesized that sub-Au-Si-eutectic annealing leads to the formation of a single and well-oriented interface, essential to template heteroepitaxial nucleation. These results are critically dependent on substrate preparation and lead to the creation of integrated nanowire systems with a low thermal budget process.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据