期刊
JOURNAL OF MATERIALS RESEARCH
卷 24, 期 7, 页码 2252-2258出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/JMR.2009.0265
关键词
-
AIN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N-2/(N-2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AIN codoped ZnO films with various crystallographic Structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 degrees C, the p-type conductive behaviors of AIN codoped ZnO films were achieved due to the formation of Zn-N bonds. According to the low-temperature photoluminescence spectra, the binding energy (E-A) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AIN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the Occupation of adequate nitrogen atoms.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据