期刊
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
卷 212, 期 3, 页码 707-712出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jmatprotec.2011.08.007
关键词
E-beam lithography; Insulating layers; Charge accumulation; Anti-static layer
资金
- Spanish Ministerio de Ciencia e Innovacion (MICINN) [W050920B0]
- MICINN [TEC2007-67065/MIC, TEC2010-19511]
This work describes the electron-beam (e-beam) lithography process developed to manufacture nano interdigital transducers (IDTs) to be used in high frequency (GHz) surface acoustic wave (SAW) applications. The combination of electron-beam (e-beam) lithography and lift-off process is shown to be effective in fabricating well-defined IDT finger patterns with a line width below 100 nm with a good yield. Working with insulating piezoelectric substrates brings about e-beam deflection. It is also shown how a very thin organic anti-static layer works well in avoiding this charge accumulation during e-beam lithography on the resist layer. However, the use of this anti-static layer is not required with the insulating piezoelectric layer laying on a semiconducting substrate such as highly doped silicon. The effect of the e-beam dose on a number of different layers (of insulating, insulating on semiconducting, semiconducting, and conductive natures) is provided. Among other advantages, the use of reduced e-beam doses increases the manufacturing time. The principal aim of this work is to explain the interrelation among e-beam close, substrate nature and IDI structure. An extensive study of the e-beam lithography of long IDT-fingers is provided, in a wide variety of electrode widths, electrode numbers and electrode pitches. It is worthy to highlight that this work shows the influence of the e-beam dose on five substrates of different conductive nature. (C) 2011 Elsevier B.V. All rights reserved.
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