期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 22, 期 25, 页码 12824-12829出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2jm31391j
关键词
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资金
- U.K. Technology Strategy Board [TP11/LIB/6/I/AM092J]
- EPSRC [EP/H000925/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H000925/1] Funding Source: researchfish
Thin films of germanium-doped zinc oxide have been deposited by atomic layer deposition. The zinc oxide matrix was grown from cyclic pulses of diethylzinc and water vapour over the temperature range of 100-350 degrees C substrate temperature. Tetramethoxygermanium(IV) was employed as a novel germanium-doping source, which could be incorporated up to 17 at%. At 2.1 at% germanium doping at a deposition temperature of 250 degrees C, the maximum carrier concentration of 2.14 x 10(20) cm(-3) coincides with a carrier mobility of approximately 5 cm(2) V-1 s(-1). No evidence for the formation of nanometre-scale germanium clustering or segregation was observed in the X-ray diffraction patterns or high-resolution transmission electron micrographs of these films. The near band edge photoluminescence shifts to higher energy with increasing germanium incorporation either by the Burstein-Moss mechanism or by alloy formation.
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