期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 21, 期 6, 页码 1810-1821出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm02547j
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资金
- State Key Laboratory of ASIC & System, Fudan University [09KF001]
Two novel 3',4',5'-trifluorobiphenyl-based aromatic polyimide monomers, 2,2'-bis[4'-(3 '',4 '',5 ''-trifluorophenyl) phenyl]-4,4'-biphenyl diamine (BTFBPD) and 2,2'-bis[4'-(3 '',4 '',5 ''-trifluorophenyl) phenyl]-4,4',5,5'-biphenyltetracarboxylic dianhydride (BTFBPDA) were synthesized. Two fluorinated polyimides (PIs), PI(BTFBPD-DPBPDA) and PI(BTFBPD-BTFBPDA) were prepared via a two-step procedure using BTFBPD reacting with 2,2'-diphenyl-4,4',5,5'-biphenyltetracarboxylic dianhydride (DPBPDA) and BTFBPDA, respectively. BTFBPD was characterized with single crystal X-ray diffraction analysis and the geometric parameters showed the noncoplanar twisted character. PIs exhibited highly organo-solubility and thermal stability. The PI films sandwiched between an indium-tin oxide(ITO) bottom electrode and Al top electrode exhibited two accessible conductivity states and can be switched from the low-conductivity to the high-conductivity. The memory devices with the configuration of Al/PI(BTFBPD-DPBPDA)/ITO exhibited a flash type memory capability, whereas the Al/PI(BTFBPD-BTFBPDA)/ITO presented a write once read many times (WORM) memory capability. The fabricated devices showed low turn-on threshold voltages of 1.3 V (PI(BTFBPD-DPBPDA)) and 1.7 V (PI(BTFBPD-BTFBPDA)) and both ON/OFF current ratios on the order of 10(3) to 10(4).
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