期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 21, 期 39, 页码 15637-15642出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1jm12366a
关键词
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资金
- Major State Basic Research Development Program of China [2010CB334704]
- National Natural Science Foundation of China [61040015]
- Research Fund for the Doctoral Program of Higher Education of China [20100111120006]
- Anhui Province Natural Science Foundation [11040606M146]
- Korea Ministry of Knowledge Economy (MKE) [20093020010040]
A blend of organic semiconductors and photocrosslinkable insulating polymers was photolithographically patterned to yield organic thin-film transistors (OTFTs). The semiconducting polymer of the blend, poly(3-hexylthiophene), was present as a nanofibrillar network and yielded excellent electronic properties. The insulating polymer matrix, poly(vinyl cinnamate), provided the photosensitivity required for photopatterning. The photopatterned TFT devices showed large on/off ratios (>10(5)) and high mobilities (0.015 cm(2) V(-1) s(-1)) comparable to those of devices patterned by conventional means using the same semiconducting materials. This simple method permitted the high-resolution cost-effective patterning of organic semiconductors and may play an important role in the mass-production of organic electronic devices.
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