期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 20, 期 13, 页码 2599-2611出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/b921449f
关键词
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资金
- National Natural Science Foundation of China [60736004, 60901050, 20721061]
- Major State Basic Research Development Program [2006CB806203, 2006CB932103, 2009CB623603]
- Chinese Academy of Sciences
With the advances of organic field-effect transistors (OFETs), the interface between semiconductors and dielectrics has received much attention due to its dramatic effects on the morphology and charge-transport of organic semiconductors in OFETs. The purpose of this review is to give an overview of the recent progress in the engineering of the dielectric-semiconductor interface in OFETs. The interface-dependent performances of OFETs are reviewed, and interfacial control methods are especially dealt with an aim to solve interfacial effects. Finally, novel applications of the dielectric-semiconductor interface for achieving multifunctions are summarized to offer a clear map of interface engineering in OFETs.
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