期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 20, 期 48, 页码 10888-10893出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm02189j
关键词
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资金
- National Natural Science Foundation of China [51002059]
- Research Fund for the Doctoral Program of Higher Education [20090142120059]
- Natural Science Foundation of Hubei Province [2009CDB326]
- Basic Scientific Research Funds for Central Colleges [Q2009043]
- High-level Talent Recruitment Foundation of Huazhong University of Science and Technology
Aligned nanowires are likely to be more suitable for applications in electronics and optoelectronics than randomly distributed nanowires. In this paper, by using a fast-heating-vapor-trapping (FHVT) method, we successfully synthesized aligned In(2)O(3) nanobelt arrays on an Au-coated silicon substrate without the use of any templates. Studies found that the nanobelts exhibited unique bi-crystalline structures consisting of two single crystalline In(2)O(3) nanobelts, most of which have the same growth direction along the [100] plane. Field-effect transistors were fabricated on the basis of single In(2)O(3) nanowires and they exhibited typical n-type transistor performance, which showed a decent response to UV light exposure.
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