4.3 Article

High performance organic thin-film transistors based on hexamethylenetetrathiafulvalene lying flat-on-surface with non-layered packing motif

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JOURNAL OF MATERIALS CHEMISTRY
卷 20, 期 28, 页码 5810-5812

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ROYAL SOC CHEMISTRY
DOI: 10.1039/c0jm01154a

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  1. New Energy and Industrial Technology Development Organization (NEDO), Japan

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The fabrication of high performance organic thin-film transistors based on hexamethylenetetrathiafulvalene is reported. The evaporated polycrystalline films on polystyrene-treated substrates were highly oriented along the b-axis, where the grains are composed of three-dimensional brickwork stacks of molecular planes lying parallel to the substrate surfaces. The side-by-side intermolecular interactions parallel to the surfaces are responsible for the high mobility of the devices.

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