期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 19, 期 7, 页码 849-857出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/b817391e
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资金
- Office of Naval Research
- American Chemical Society Petroleum Research Fund
- National Science Foundation
- Ford Graduate Fellowship
- Alfred P. Sloan Research Fellowship
Metal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solidsolid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.
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