期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 19, 期 22, 页码 3643-3647出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/b900141g
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资金
- National Science Council, Taiwan (NSC) [96-2628-E-033-001-MY3]
Polyhedral oligomeric silsesquioxane (POSS) nanocomposite, which is prepared from two liquid monomers and can be processed under the spinning on'' process, exhibits an ultra-low dielectric constant (k) of 1.47. The ultra-low k value of the POSS nanocomposite material is attributed to the formation of a POSS lamellar structure. The nanocomposite material also shows good thermal stability, high glass transition temperature, and re-workable characteristics, warranting its high potential for uses in modern and future microelectronics.
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