期刊
JOURNAL OF MATERIALS CHEMISTRY
卷 18, 期 9, 页码 1029-1036出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/b715746k
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Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (mu) of 6 x 10(-4) cm(2) V-1 s(-1) and 0.05 cm(2) V-1 s(-1) for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene ( DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of similar to 0.1 cm(2) V-1 s(-1). Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.
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