4.5 Article

Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

期刊

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
卷 324, 期 5, 页码 849-852

出版社

ELSEVIER
DOI: 10.1016/j.jmmm.2011.09.031

关键词

Spin injection; Graphene; Tunnel barrier; Atomic layer deposition

资金

  1. PRESTO, Japan Science and Technology Agency
  2. Special Coordination Fund for Promoting Science and Technology
  3. MEXT
  4. CREST, Japan Science and Technology Agency

向作者/读者索取更多资源

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of similar to 30 Omega has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. (C) 2011 Elsevier B.V. All rights reserved.

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