期刊
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
卷 324, 期 5, 页码 849-852出版社
ELSEVIER
DOI: 10.1016/j.jmmm.2011.09.031
关键词
Spin injection; Graphene; Tunnel barrier; Atomic layer deposition
资金
- PRESTO, Japan Science and Technology Agency
- Special Coordination Fund for Promoting Science and Technology
- MEXT
- CREST, Japan Science and Technology Agency
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of similar to 30 Omega has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. (C) 2011 Elsevier B.V. All rights reserved.
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