期刊
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
卷 322, 期 14, 页码 1973-1978出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jmmm.2010.01.016
关键词
Thin film; Nitride; Evaporation; Ultra high vacuum; Erbium; ErN; Resistivity; Magnetic structure; Magnetic anisotropy; Crystal field; Nanocrystalline
资金
- New Zealand Centres of Research Excellence Fund
- New Zealand New Economy Research Fund
- MacDiarmid Institute
- Royal Society of New Zealand
We report a magnetization study of stoichiometric ErN nanocrystalline films grown on Si and protected by a GaN passivating layer. According to the temperature dependence of the resistivity the films are heavily doped semiconductors. Above 100 K the magnetization data fit well to a Curie-Weiss behavior with a moment expected within the free-ion Er(3+) J = 15/2 multiplet. Below 50 K the Curie-Weiss plot steepens to an effective moment corresponding to that in the crystal-field determined quartet ground state, and develops a clear paramagnetic Curie-Weiss temperature of about 4.5 K. Zero-field- and field-cooled magnetization curves and the AC susceptibility firmly establish a ferromagnetic groundstate within that multiplet below a Curie temperature of 6.3 +/- 0.7 K. Due to the (1 1 1) texture of the film the comparison between the magnetization behavior, when the field is applied parallel and perpendicular to the film plane, gives new information about the magnetic structure. An arrangement of the moments according to the model derived from neutron diffraction for bulk HoN is strongly suggested. (C) 2010 Elsevier B.V. All rights reserved.
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