期刊
JOURNAL OF LUMINESCENCE
卷 155, 期 -, 页码 275-281出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2014.06.007
关键词
Al doped ZnO thin films; Photoluminescence; Surface Morphology; Raman shift; Optical bandgap
类别
资金
- King Abdullah Institute for Nanotechnology
In this paper, we report the structural and optical properties of Al doped ZnO (AZO) thin films grown on glass substrates using the sol-gel process. To understand the effect of Al doping on the structural and optical response of ZnO nanoparticles thin films, the prepared samples have been characterized using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), photoluminescence (PL), UV-vis absorption and Raman spectroscopy. X-ray diffraction results show that Al doped ZnO nanoparticles have hexagonal phase similar to ZnO nanoparticles. TEM images as well as XRD data exhibit the estimated size of nanoparticles to be in the range 35-45 nm. The optical band gap has been determined from optical absorption spectra. The band gap varied from 3.27 eV for undoped ZnO film to 3.87 eV for AZO film having 3 atwt%, Al. The blue shift in energy band gap mainly related to carrier concentration induced by AI-donor doping, and to the degree of crystalline order. Photoluminescence study further confirms the blue shift in UV emission when Al doping concentration is increased, as a consequence of extension in band gap. (C) 2014 Elsevier B.V. All rights reserved.
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