期刊
JOURNAL OF LUMINESCENCE
卷 147, 期 -, 页码 184-189出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jlumin.2013.11.026
关键词
Nanocrystalline CdS thin films; Pulsed laser deposition; Ion beam irradiation; Photoluminescence
类别
资金
- University Grant Commission (UGC), India
- Helmholtz-Gemeinschaft Deutscher Forschungszentren [HGF-VH-NG-713]
Intense green emission is reported from nanocrystalline CdS thin films grown by pulsed laser deposition. The effect of ion beam induced dense electronic excitation on luminescence property of CdS films is explored under irradiation using 70 MeV Ni-58(6+) ions. It is found that swift heavy ion beam irradiation enhances the emission intensity by an order of 1 and broadens the emission range. This feature is extremely useful to enhance the performance of different photonic devices like light emitting diodes and lasers, as well as luminescence based sensors. To examine the role of energy relaxation process of swift heavy ions in creation/annihilation of different defect levels, multi-peaks are fitted in photoluminescence spectra using a Gaussian function. The variation of contribution of different emissions in green emission with ion fluence is studied. Origin of enhancement in green emission is supported by various characterization techniques like UV-visible absorption spectroscopy, glancing angle X-ray diffraction, micro-Raman spectroscopy and transmission electron microscopy. A possible mechanism of enhanced GE due to ion beam irradiation is proposed on the basis of existing models. (C) 2013 Elsevier B.V. All rights reserved.
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