期刊
JOURNAL OF LUMINESCENCE
卷 132, 期 2, 页码 345-349出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2011.09.006
关键词
Exciton; Radiative emission; Perovskite semiconductor; Photoluminescence
类别
资金
- OmniPV Corporation
- New York State Foundation for Science, Technology, and Innovation (NYSTAR) through the Photonics Center of the City University of New York
We report on the determination of exciton binding energy in perovskite semiconductor CsSnI3 through a series of steady state and time-resolved photoluminescence measurements in a temperature range of 10-300 K. A large binding energy of 18 meV was deduced for this compound having a direct band gap of 1.32 eV at room temperature. We argue that the observed large binding energy is attributable to the exciton motion in the natural two-dimensional layers of SnI4 tetragons in this material. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据