期刊
JOURNAL OF LUMINESCENCE
卷 130, 期 11, 页码 2265-2270出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2010.07.003
关键词
Electroluminescence; Doping concentration; Electron injection; Band bending
类别
资金
- National Natural Science Foundation of China [20631040, 20771099]
- MOST of China [2006CB601103, 2006DFA42610]
In this paper, we report an efficient strategy to design bright blue and blue-green electroluminescent (EL) devices by slightly doping tris(8-hydroxyquinoline) aluminum (Alq(3)) into N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-diphenyl-4,4'-diamine (NPB) as the light-emitting layer (EML). Bright EL devices with tunable spectra were obtained by strictly controlling the doping concentration of Alq(3). With increasing current density, EL efficiencies of these devices increase first and then decrease gradually after reaching the maximum. Analyzing the current density-voltage (J - V) characteristics of hole-only and electron-only devices, we found the presence of Alq(3) molecules in EML not only facilitates the injection of electrons from hole block layer (HBL) into EML but also stays the transport of holes in EML, thus causing significant enhancement of EL efficiency and brightness due to improved carriers balance and broadening of recombination zone. More interestingly, the doping concentration of Alq(3) strongly influences the injection and transport processes of electrons, thus determining the distribution of holes and electrons on NPB and Alq(3) molecules. (C) 2010 Elsevier B.V. All rights reserved.
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