4.7 Article

A Flat Panel Photodetector Formed by a ZnS Photoconductor and ZnO Nanowire Field Emitters Achieving High Responsivity From Ultraviolet to Visible Light for Indirect-Conversion X-Ray Imaging

期刊

JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 36, 期 20, 页码 5010-5015

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2018.2868292

关键词

Broadband; flat panel photodetector; ZnS photoconductor; ZnO nanowire field emitters

资金

  1. National Key Research and Development Program of China [2016YFA0202001, 2016YFA0202002]
  2. Department of Science and Technology, Guangdong Province, Fundamental Research Funds for the Central Universities
  3. Guangzhou Science Technology and Innovation Commission [201504010012, 201508020121]

向作者/读者索取更多资源

Flat panel photodetectors have been well studied for their applications in large area detection such as indirect-conversion X-ray imaging. Even though a few of photodetectors have become commercially available, there is still a room for advancement in responsive wavelength range and sensitivity. This paper reports a sensitive broadband flat panel photodetector that integrates a ZnS photoconductor with an array of ZnO nanowire field emitters. The photodetector exhibits a spectral responsivity of 5.93 x 10(2)-3.79 x 10(5) A/W with an external quantum efficiency of 1.03 x 10(5)-134 x 10(6) % from 350 to 700 nm wavelengths. Additionally, a short signal rise time of 55 ms and a fall time of 1.03 s are demonstrated. The flat panel photodetector with broadband detection and a high responsivity shows a great promise for use in indirect-conversion X-ray detector incorporated with a broad range of X-ray scintillators.

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