期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 29, 期 4, 页码 499-510出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2010.2098849
关键词
Diode laser; inverse quantum dots; nanopores; nanostructures; quantum dots; self-assembly; semiconductor lasers; 3-D confinement
资金
- U.S. Department of Energy, Office of Basic Energy Sciences as part of an Energy Frontier Research Center
- National Science Foundation [ECCS 08-21979]
- Intel Alumni Endowed Chair in Electrical and Computer Engineering
Semiconductor quantum dot lasers have been extensively studied for applications in future lightwave telecommunications systems. This paper summarizes a tutorial that was presented at the Optical Fiber Communication (OFC) 2010. The motivation for quantum dots in lasers is outlined, and the desirable effects of three dimensional quantum confinement are described. Methods for forming self-assembled quantum dots and the resultant laser characteristics are presented. The formation of patterned quantum dot lasers and the results of this type of quantum dot laser are outlined. Finally, a novel inverted quantum dot structure or nanopore laser containing 3-D quantization formed from an engineered periodicity is introduced.
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