4.7 Article

Correlation of Scattering Loss, Sidewall Roughness and Waveguide Width in Silicon-on-Insulator (SOI) Ridge Waveguides

期刊

JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 27, 期 18, 页码 3999-4008

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2009.2021562

关键词

Scattering loss; sidewall roughness; silicon-on-insulator (SOI) waveguide; star coupler

资金

  1. Ontario government under an OGS

向作者/读者索取更多资源

We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mu m in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-square roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据