期刊
JOURNAL OF LIGHTWAVE TECHNOLOGY
卷 27, 期 18, 页码 3999-4008出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2009.2021562
关键词
Scattering loss; sidewall roughness; silicon-on-insulator (SOI) waveguide; star coupler
资金
- Ontario government under an OGS
We use star couplers to measure the relative scattering losses of silicon-on-insulator (SOI) ridge waveguides of various widths over the range of 1.75 to 0.2 mu m in a single measurement. The scattering loss data obtained for waveguides fabricated by different photolithography and e-beam base processes correlate well with the measured root-mean-square roughness of the waveguide sidewalls obtained using SEM image analysis, and are in qualitative agreement with the prediction of simple scattering loss theory.
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