4.5 Article

Nano-SiC ceramic sintering at ultra-high pressure and high temperature

期刊

JOURNAL OF INORGANIC MATERIALS
卷 23, 期 4, 页码 811-814

出版社

SCIENCE PRESS
DOI: 10.3724/SP.J.1077.2008.00811

关键词

ultra-high pressure; sinter; silicon carbide; alumina

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High-density Sic ceramics doped with 2wt% Al2O3 additives were fabricated by ultra-high pressure and high temperature technique (4.5GPa,1250 degrees C,20min). The structures, grain size, lattice parameters, chemical component, morphology and mechanical property of the sintered Sic ceramics were characterized by X-ray diffraction (XRD), X-ray photoelectron energy spectroscope (XPS), scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDX) and nano impress indenter. The results show that nano-SiC ceramic is fully densified by ultra-high pressure technique at, relative low temperature (1250 +/- 50 degrees C). No phase transfer or holes is found in the sintered nano-SiC ceramic. The hardness and elastic modulus of the sintered SiC ceramic with grain size of 22nm and lattice parameters of 4.355 angstrom are 33.7GPa and 407GPa, respectively.

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