期刊
JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS
卷 22, 期 1, 页码 21-26出版社
SPRINGER
DOI: 10.1007/s10904-011-9619-y
关键词
p-Type SnO2 thin films; Annealing; Sputtering; Non-linear characteristics; Transparent p-n junction
资金
- National Basic Research Program of China [2009CB939704]
- National Science Foundation of China [51032005]
- Wuhan University of Technology
Highly transparent, p-type conducting SnO2:Zn films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target followed by annealing at various temperatures. The effect of annealing temperature on the structural, electrical and optical performances of SnO2:Zn films has been studied. XRD results show that all the SnO2:Zn films possess tetragonal rutile structure with the preferred orientation of (101). Hall effect results indicate that at 873 K for 3 h was the optimum annealing parameters for p-type SnO2:Zn films with relatively high hole concentration and low resistivity of 3.334 x 10(19) cm(-3) and 3.588 Omega cm, respectively. The average transmission of the p-type SnO2:Zn films were above 80% in the visible light range. In addition, p-type conductivity was also confirmed by the non-linear characteristics of a p-type SnO2:Zn/n-type SnO2:Sb structure.
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