4.6 Article

Anergy in memory CD4+ T cells is induced by B cells

期刊

JOURNAL OF IMMUNOLOGY
卷 181, 期 5, 页码 3221-3231

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AMER ASSOC IMMUNOLOGISTS
DOI: 10.4049/jimmunol.181.5.3221

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资金

  1. NIAID NIH HHS [R01AI063764, R01 AI063764-02, R01 AI063764-01A2, R01 AI063764] Funding Source: Medline
  2. NIGMS NIH HHS [R01GM53549, R01 GM053549, R01 GM053549-09, R01 GM053549-08] Funding Source: Medline

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Induction of tolerance in memory T cells has profound implications in the treatment of autoimmune diseases and transplant rejection. Previously, we reported that the presentation of low densities of agonist peptide/MHC class 11 complexes induced anergy in memory CD4(+) T cells. In the present study, we address the specific interaction of different types of APCs with memory CD4(+) T cells. A novel ex vivo anergy assay first suggested that B cells induce anergy in memory T cells, and an in vivo cell transfer assay further confirmed those observations. We demonstrated that B cells pulsed with defined doses of Ag anergize memory CD4 cells in vivo. We established that CD11c(+) dendritic cells do not contribute to anergy induction to CD4 memory T cells, because diphtheria toxin receptor-transgenic mice that were conditionally depleted of dendritic cells optimally induced anergy in memory CD4(+) T cells. Moreover, B cell-deficient muMT mice did not induce anergy in memory T cells. We showed that B2 follicular B cells are the specific subpopulation of B cells that render memory T cells anergic. Furthermore, we present data showing that anergy in this system is mediated by CTLA-4 up-regulation on T cells. This is the first study to demonstrate formally that B cells are the APCs that induce anergy in memory CD4(+) T cells.

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