期刊
ORGANIC ELECTRONICS
卷 22, 期 -, 页码 117-121出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2015.03.039
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2011-0007997]
- Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea government Ministry of Trade, Industry and Energy [20144030200580]
We proposed and investigated a controllable air-stable graphene n-doping method on phosphosilicate glass (PSG) to achieve intrinsic graphene. Through Raman, XPS, and AFM analyses, it was confirmed that the initially p-type doped graphene was recovered to intrinsic graphene through n-type doping phenomenon. The n-doping control was accomplished by adjusting the concentration of the out-diffused P2O5 molecules from the PSG layer. In particular, a larger amount of P2O5 molecules and a smoother PSG surface were achieved after the higher temperature annealing, consequently yielding a larger doping impact on the graphene layer. Finally, a very small Dirac point shift (1-3 V) was observed after 96 h of air exposure, compared to the degree of shift by the n-doping effect (17-36 V), demonstrating that this n-doping method is fairly stable in air. (C) 2015 Elsevier B.V. All rights reserved.
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