期刊
ORGANIC ELECTRONICS
卷 23, 期 -, 页码 213-218出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2015.05.012
关键词
Organic thin-film transistor; Gate insulator; Gate dielectric; Polyimide; Polyvinyl alcohol
资金
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT and Future Planning, Republic of Korea [2011-0031628]
- National Research Foundation of Korea [2011-0031628] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this paper, we report the fabrication of a polyimide/polyvinyl alcohol (PVA) bilayer gate insulator for low-voltage organic thin-film transistors (TFTs). The introduction of a PVA layer to form a bilayer structure improves the dielectric and insulating properties of the gate insulator. Organic TFTs with 150 nm-thick polyimide and PVA gate insulators were inactive at low operation voltages below 5 V. Conversely, organic TFTs with 150 nm-thick polyimide/PVA bilayer gate insulators exhibited excellent device performances. Our results suggest that the introduction of a PVA layer with a high dielectric constant could be a simple and efficient way to improve the device performance of low-voltage organic TFTs. (C) 2015 Elsevier B.V. All rights reserved.
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