Solution-processed single-crystal perylene diimide transistors with high electron mobility

We have successfully demonstrated a single-crystal field-effect transistors (FETs) based on an asymmetric perylenetetracarboxylic diimide (a-PDI) compound with polystyrene (PS)/SiO2 bilayer as gate dielectric. The single crystals are in-situ grown on substrate from simple solution evaporation method, thus may be suitable for large area electronics applications. The PS modified gate dielectric could minimize charge trapping by the hydroxyl groups of the SiO2 surface. The resulting solution processed single crystals transistors are characterized in ambient air, and exhibited maximum electron mobility of ca. 1.2 cm(2) V-1 s(-1) and high I-on:I-off > 10(5). (C) 2015 Elsevier B.V. All rights reserved.