Heterogeneously integrated 2.0 μm CW hybrid silicon lasers at room temperature

Here we experimentally demonstrate room temperature, continuous-wave (CW), 2.0 mu m wavelength lasers heterogeneously integrated on silicon. Molecular wafer bonding of InP to Si is employed. These hybrid silicon lasers operate CW up to 35 degrees C and emit up to 4.2 mW of single-facet CW power at room temperature. III-V tapers transfer light from a hybrid III-V/silicon optical mode into a Si waveguide mode. These lasers enable the realization of a number of sensing and detection applications in compact silicon photonic systems. (C) 2015 Optical Society of America