期刊
OPTICS EXPRESS
卷 23, 期 15, 页码 18864-18871出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.23.018864
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类别
资金
- National Science Foundation of China [51202216]
- Postdoctoral Science Foundation of China [111400-X91305]
We report a novel ultraviolet photodetector based on graphene/hBN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW(-1)), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2 similar to 20AW(-1)). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices. (C) 2015 Optical Society of America
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