4.6 Article

High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode

期刊

OPTICS EXPRESS
卷 23, 期 21, 页码 27213-27220

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OPTICAL SOC AMER
DOI: 10.1364/OE.23.027213

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资金

  1. German Ministry of Research and Education (BMBF)
  2. project SASER [01BT1209]
  3. project MOSAIC [13N12434]
  4. RF2THzSiSoC [16BP12503]
  5. German Research Foundation (DFG) [Sonderforschungsbereich SFB787]
  6. EU [607401]

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A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high. 3 dB bandwidth at a medium dark current. Bandwidth values are 40 GHz at zero bias and more than 70 GHz at -1 V. Responsivity at 1.55 mu m wavelength ranges from 0.84 A/W at zero bias to 1 A/W at -1 V. Room temperature dark current density at -1 V is about 1 A/cm(2). The high responsivity mainly results from the use of a new, low-loss contact scheme, which moreover also reduces the negative effect of photo carrier diffusion on bandwidth. (C) 2015 Optical Society of America

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