期刊
OPTICS EXPRESS
卷 23, 期 21, 页码 27213-27220出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.23.027213
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资金
- German Ministry of Research and Education (BMBF)
- project SASER [01BT1209]
- project MOSAIC [13N12434]
- RF2THzSiSoC [16BP12503]
- German Research Foundation (DFG) [Sonderforschungsbereich SFB787]
- EU [607401]
A novel waveguide-coupled germanium p-i-n photodiode is demonstrated which combines high responsivity with very high. 3 dB bandwidth at a medium dark current. Bandwidth values are 40 GHz at zero bias and more than 70 GHz at -1 V. Responsivity at 1.55 mu m wavelength ranges from 0.84 A/W at zero bias to 1 A/W at -1 V. Room temperature dark current density at -1 V is about 1 A/cm(2). The high responsivity mainly results from the use of a new, low-loss contact scheme, which moreover also reduces the negative effect of photo carrier diffusion on bandwidth. (C) 2015 Optical Society of America
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