期刊
OPTICS EXPRESS
卷 23, 期 5, 页码 6722-6730出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.23.006722
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资金
- Agence Nationale de la Recherche under GRAAL convention [ANR 2011 B S03 004 01]
- Triangle de la Physique under Gerlas convention
- RENATECH network
- Region Ile de France (C'Nano2011-Nanoetch project)
- CIFRE Grant
We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection is achieved with Schottky contacts on n-type doped germanium. We show that a biaxial tensile-strain up to 0.72% can be transferred by optimizing the carrier injection profile. The transferred strain is measured by the electroluminescence spectral red-shift and compared to finite element modeling. We discuss the impact of this strain level to achieve population inversion in germanium. (C) 2015 Optical Society of America
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