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OPTICS EXPRESS
卷 23, 期 24, 页码 A1687-A1692出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.23.0A1687
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- JST-CREST
We measure the excitation-wavelength and power dependence of time-resolved photoluminescence (PL) from the top InGaP subcell in a InGaP/GaAs/Ge triple-junction solar cell. The wavelength-dependent data reveals that the PL decays are governed by charge separation. A fast single-exponential PL decay is observed at low excitation power densities, which is the charge separation under short-circuit condition. Under strong excitation a bi-exponential PL decay is observed. Its slow component appears at early times, followed by a faster component at late times. The slow decay is the carrier recombination of the subcell. The following fast component is the charge separation process under reduced built-in potential near the operating point. The subcells electrical conversion efficiency close to the operating point is evaluated using this decay time constant. (C) 2015 Optical Society of America
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