期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 43, 期 4, 页码 857-862出版社
SPRINGER
DOI: 10.1007/s11664-014-3022-8
关键词
Silicon carbide; nitrogen plasma passivation; interface trap; density; field-effect mobility
资金
- US Army Research Laboratory [W911NF-07-2-0046]
- US National Science Foundation [MR-0907385]
- II-VI Foundation Block-Gift Program
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907385] Funding Source: National Science Foundation
A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.
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