期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 43, 期 8, 页码 2901-2907出版社
SPRINGER
DOI: 10.1007/s11664-014-3146-x
关键词
CdZnTe; single crystal; VGF; crystal quality
资金
- Delegation Generale de l'Armement (DGA) of the French Ministry of Defense
We report the bulk growth of single-crystal CdZnTe and characterization of material associated with large-area wafers produced from the CdZnTe ingots. Our experimental vertical gradient freeze set-up enables accurate detection of the beginning and end of the crystallization step by careful monitoring of the thermal cycle. Single crystal, (111)-oriented ingots with a diameter of 80 mm were routinely obtained without grain boundary or twin. The size of the CdZnTe ingots was extended to 115 mm in diameter, enabling production of large-dimension substrates suitable for infrared focal-plane arrays with megapixel-resolution. Crystal quality was investigated by double-crystal x-ray rocking curve mapping and by chemical revelation of etch pits. Typical mean values for the rocking curve full width at half maximum were in the range 20-40 arcs. Evaluation of etch pit density on the (111)Te face furnished values in the low 10(4)/cm(2).
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