Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

Compared with traditional (100) surfaces, the growth window for achieving high-quality photonic device structures on (111) GaAs by conventional molecular beam epitaxy (MBE) is very narrow. However, strained and unstrained structures produced on (111) substrates offer a new class of electronic and optoelectronic devices that benefit from the piezoelectric effect-a feature not accessible on symmetric (100) orientations-and additional material choices, such as InAs and InGaAs. In this work, we report on a series of investigations of strained and unstrained structures that include GaAs, AlGaAs/GaAs, and InAs/GaAs quantum layers deposited on epi-ready GaAs (111)B 2 degrees -> [2 (1) over bar(1) over bar ]Si-doped substrates by conventional MBE.