期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 41, 期 8, 页码 2151-2154出版社
SPRINGER
DOI: 10.1007/s11664-012-2137-z
关键词
ZnO; ZnS; MBE; plasma-assisted
资金
- NSF [ECCS-1028364, HRD-0833180]
- Army Research Office [W911NF0810419]
- PS-CUNY
- Division Of Human Resource Development
- Direct For Education and Human Resources [833180] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1028364] Funding Source: National Science Foundation
ZnO thin films have been grown by plasma-assisted molecular beam epitaxy on (111) ZnS substrates. The films grown on Zn-face substrates showed better structural and optical properties compared with those grown on S-face substrates, as demonstrated by x-ray diffraction and photoluminescence measurements. Scanning electron microscopy measurements indicated that ZnO films grown on Zn-face substrates also have smoother surface morphology. It is also found that higher growth temperature yields films with better quality.
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