4.5 Article

Effects of Bi2Se3 Nanoparticle Inclusions on the Microstructure and Thermoelectric Properties of Bi2Te3-Based Nanocomposites

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 41, 期 12, 页码 3411-3416

出版社

SPRINGER
DOI: 10.1007/s11664-012-2255-7

关键词

Bismuth telluride; thermoelectric; nanocomposite

资金

  1. Basic Science Research Program through the National Research Foundation of Korea [20110003767]
  2. Nano Material Technology Development Program through the National Research Foundation of Korea (NRF)
  3. Ministry of Education, Science, and Technology [20110030147]
  4. Center for Nanostructured Materials Technology under 21st Century Frontier R&D Programs of the Ministry of Education, Science, and Technology, Korea [2011K000197]
  5. KISTI ReSEAT Program, Korea

向作者/读者索取更多资源

A series of thermoelectric nanocomposite samples were prepared by integrating Bi2Se3 nanoparticles into a bulk Bi2Te3 matrix. Primarily, spherical Bi2Se3 nanoparticles with diameter of similar to 30 nm were synthesized by combining bismuth acetate with elemental Te in oleic acid solution. Bi2Te3-based nanocomposite samples were prepared by consolidating the appropriate quantity of Bi2Se3 nanoparticles with the starting elements (Bi and Te) using typical solid-state synthetic reactions. The microstructure and composition of the Bi2Te3-based nanocomposites, as well as the effects of the Bi2Se3 nanoparticles on their thermoelectric properties, are investigated. Transmission electron microscopy observation of the Bi2Te3-based nanocomposites reveals two types of interface between the constituent materials, i.e., coherent and incoherent, depending on the Bi2Se3 concentration. The Bi2Se3 nanoparticles in the Bi2Te3 matrix act as scattering centers for a wider range of phonon frequencies, thereby reducing the thermal conductivity. As a result, the maximum ZT value of 0.75 is obtained for the Bi2Te3 nanocomposite with 10 wt.% Bi2Se3 nanoparticles at room temperature. It is clear that the reduction in the thermal conductivity plays a central role in the enhancement of the ZT value.

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