期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 40, 期 8, 页码 1749-1756出版社
SPRINGER
DOI: 10.1007/s11664-011-1676-z
关键词
Quantum dot gate FET; three-state FET; II-VI insulator; lattice-matched gate insulator
资金
- ONR [N00014-02-1-0883, N00014-06-1-0016]
- NSF [EEC 0407279 (NUE), ECS 0622068]
This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO (x) -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high-kappa gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO (x) -Ge quantum dots.
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