4.5 Article

Interfacial Step Structure at a (0001) Basal Twin in Bi2Te3

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 41, 期 6, 页码 1456-1464

出版社

SPRINGER
DOI: 10.1007/s11664-011-1859-7

关键词

Grain boundaries; twins; dislocations; electron microscopy; bismuth telluride; thermoelectrics

资金

  1. US Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
  2. Sandia LDRD office

向作者/读者索取更多资源

At present, little is known concerning the atomic-scale structure of grain boundaries in Bi2Te3 and related thermoelectric materials. As twins are perhaps the simplest possible type of grain boundary, they provide a good starting point for studies of interface structure in this class of materials. Here, we present an electron microscopic study of an interfacial step observed at a (0001) basal twin boundary in Bi2Te3. We discuss the crystallography of defects at twins in Bi2Te3 by considering the geometric implications for differently terminated step arrangements and comparing the defect configurations anticipated for deformation and annealing/growth twins. Finally, we consider the observed defect in this framework and discuss its relationship to analogous features in face-centered-cubic metals, namely the {112}-type interfaces that are commonly observed terminating {111} growth and annealing twins in these materials. This analysis provides insight concerning the relationships of dislocations to twin formation and morphology in Bi2Te3.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据