期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 40, 期 11, 页码 2214-2221出版社
SPRINGER
DOI: 10.1007/s11664-011-1729-3
关键词
Cu2ZnSnS4; copper zinc tin sulfide; thin-film solar cell; grain boundaries; grain growth; earth-abundant photovoltaic materials; chalcopyrite; sodium; kesterite
资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-SC0001630]
- U.S. Department of Energy (DOE) [DE-SC0001630] Funding Source: U.S. Department of Energy (DOE)
We investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) polycrystalline thin films using cosputtering from binary sulfide targets followed by annealing in sulfur vapor at 500A degrees C to 650A degrees C. The films are the kesterite CZTS phase as indicated by x-ray diffraction, Raman scattering, and optical absorption measurements. The films exhibit (112) fiber texture and preferred low-angle and I 3 pound grain boundary populations which have been demonstrated to reduce recombination in Cu(In,Ga)Se-2 and CdTe films. The grain growth kinetics are investigated as functions of temperature and the addition of Na. Significantly, lateral grain sizes above 1 mu m are demonstrated for samples grown on Na-free glass, demonstrating the feasibility for CZTS growth on substrates other than soda lime glass.
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