Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators

This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn(0.95)Mg(0.05)S/ZnS tunnel insulators. The GeO(x)-cladded Ge and SiO(x)-cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high-kappa dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si(3)N(4) and SiO(2) layers grown by plasma-enhanced chemical vapor deposition.