期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 8, 页码 1268-1276出版社
SPRINGER
DOI: 10.1007/s11664-010-1208-2
关键词
Indium; graphene; gallium; solder; electrical conductivity
资金
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1049751] Funding Source: National Science Foundation
Samples of composites of graphene with indium or indium-gallium alloy as the matrix were prepared by a process of spreading exfoliated graphene oxide on the foils, repeatedly folding and rolling. The foils were intermittently annealed and the process repeated by addition of more graphene oxide. Indium flux was used to remove any indium or gallium oxide. The samples were characterized by x-ray diffraction, and optical and scanning electron microscopy (SEM). Electrical resistivity and temperature coefficient of resistance (TCR) were measured using a four-probe method in the temperature range of 260 K to 340 K, and the results were used to determine the volume fraction of graphene from effective mean-field analysis. The volume fraction of graphene remained between 0.11 and 0.14 in samples of In with graphene and between 0.12 and 0.13 in samples of In-Ga with graphene. The results indicate that the electrical resistivity and the TCR of the composite were reduced by the addition of graphene. The resistivity of graphene remained between 1.19 x 10(-6) ohm cm and 1.87 x 10(-6) ohm cm in all samples and was thus almost independent of the matrix composition. The electrical resistivity of graphene was found to be an order of magnitude smaller than that of indium or the indium-gallium alloy.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据