期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 6, 页码 704-708出版社
SPRINGER
DOI: 10.1007/s11664-010-1171-y
关键词
Solar cell; equivalent circuit; triple junction; temperature; SPICE
Temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell were analyzed in detail using an equivalent circuit calculation. The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. Fitting of I-V curves between measured and calculated data was carried out, and the diode parameters and temperature exponents of the single-junction solar cells were extracted. The parameters for each single-junction solar cell were used in the equivalent circuit model for the triple-junction solar cell, and calculations of solar cell performance were carried out. Measured and calculated results of the I-V characteristics at various temperatures agreed well.
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