期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 9, 页码 1920-1925出版社
SPRINGER
DOI: 10.1007/s11664-009-1047-1
关键词
Pulsed laser deposition (PLD); bismuth telluride (Bi-Te); thermoelectric energy harvesters
This article reports on the development of thin films of p- and n-type bismuth telluride compounds which are suitable for microelectromechanical systems (MEMS) thermoelectric energy harvesters. Films were prepared by the pulsed laser deposition technique. It is shown that the thin films of binary Bi-Te alloys outperformed considerably their ternary counterparts. Furthermore, the highest thermoelectric figure of merit (ZT) was found to be 0.39 for the p-type Bi32Te68 alloy, whereas the optimal n-type alloy was Bi25Te75, which was characterized by a relatively low stress gradient.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据