期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 4, 页码 355-364出版社
SPRINGER
DOI: 10.1007/s11664-010-1140-5
关键词
MOCVD; GaSb; nanowires
资金
- National Science Foundation [ECS-0093742]
- Illuminex Corp. [0740336]
GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor-liquid-solid (VLS) growth using a metalorganic chemical vapor deposition process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 Omega cm. The photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.
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