期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 38, 期 4, 页码 569-573出版社
SPRINGER
DOI: 10.1007/s11664-008-0609-y
关键词
Ohmic contacts; nickel contacts; semiconductor contacts; SiC contacts; degradation mechanism; stability; reliability
We investigated the thermal stability of Pt/TaSi (x) /Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The contacts remained ohmic on lightly doped n-type (similar to 1 x 10(16) cm(-3)) 4H-SiC for over 1000 h in air at 300A degrees C. Although a gradual increase in specific contact resistance from 3.4 x 10(-4) Omega cm(2) to 2.80 x 10(-3) Omega cm(2) was observed, the values appeared to stabilize after similar to 800 h of heating in air at 300A degrees C. The contacts heated at 500A degrees C and 600A degrees C, however, showed larger increases in specific contact resistance followed by nonohmic behavior after 240 h and 36 h, respectively. Concentration profiles from Auger electron spectroscopy and electron energy-loss spectroscopy show that loss of ohmic behavior occurs when the entire tantalum silicide layer has oxidized.
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