期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 38, 期 8, 页码 1771-1775出版社
SPRINGER
DOI: 10.1007/s11664-009-0758-7
关键词
HgCdTe; CdTe/Si; molecular beam epitaxy; atomic force microscopy; etch pit density
Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination. A new (112)B CdTe/Si EPD etch has also been demonstrated which reduces the surface roughness of the etched epilayer and makes etch pit density determination less problematic.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据