期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 38, 期 6, 页码 731-736出版社
SPRINGER
DOI: 10.1007/s11664-009-0715-5
关键词
Graphene growth; carbon nanotubes; SiC; surface structures
Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO2/SiC structure was annealed at 1350A degrees C in 10(-5) Torr; the SiO2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10(-5) Torr.
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