4.5 Article Proceedings Paper

Oscillatory Behavior of Thermoelectric Properties in p-PbTe Quantum Wells

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 39, 期 9, 页码 2085-2091

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SPRINGER
DOI: 10.1007/s11664-009-0996-8

关键词

PbTe; doping; Na; epitaxial films; thickness; thermoelectric properties; quantum size effects; oscillations

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The room-temperature dependences of the Seebeck coefficient, Hall coefficient, electrical conductivity, charge carrier mobility, and thermoelectric power factor were obtained as a function of thickness d (d = 8 nm to 400 nm) of PbTe epitaxial layers grown by thermal evaporation in vacuum of PbTe polycrystals doped with Na onto (100)KCl surfaces and covered with an Al(2)O(3) layer. Distinct oscillations in the d-dependences of the properties were observed and attributed to the size quantization of the energy spectra in PbTe layers. The experimental values of the oscillation period are in good agreement with the results of theoretical calculations using the effective-mass approximation and a model for a rectangular potential well with infinitely high walls. It follows from the obtained results that quantization of the energy spectrum in PbTe thin-film structures occurs not only for the electron gas but also for the hole gas.

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